Liquid Crystal Display and the Fabrication method
专利摘要:
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device and a method of manufacturing the same, which allow top and bottom conduction by applying a conductive agent after bonding an upper substrate and a lower substrate. According to the present invention, when the uppermost layer of the lower substrate is an insulating film, a gate pad and a source are extended to the outside of the sealing material of the lower plate for conducting upper and lower substrates when connecting a tab mounted with a drive drive to a panel of a liquid crystal display and applying a signal. The Vcom line of the pads is designed to come out and a conducting agent is formed on the side so that the Vcom signal of the lower substrate is conducted to the upper common electrode. 公开号:KR20040061809A 申请号:KR1020020088109 申请日:2002-12-31 公开日:2004-07-07 发明作者:남승희 申请人:엘지.필립스 엘시디 주식회사; IPC主号:
专利说明:
Liquid crystal display and its manufacturing method {Liquid Crystal Display and the Fabrication method} [16] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a method for manufacturing a liquid crystal display device in which top and bottom conduction are possible by applying a conductive agent after bonding an upper substrate and a lower substrate. [17] In general, CRT (or CRT: Cathode Ray Tube) has been the most used screen display device for displaying image information on the screen, which is inconvenient to use because it is bulky and heavy compared to the display area. Followed. [18] Accordingly, a thin film type flat panel display device having a small display area that can be easily used in any place even though the display area is large has been developed, and is gradually replacing the CRT display device. In particular, liquid crystal displays (LCDs) exhibit superior display resolution than other flat panel displays, and exhibit high response speed as compared to CRTs when a moving image is realized. [19] As is known, the driving principle of the liquid crystal display device utilizes the optical anisotropy and polarization properties of the liquid crystal. Since the liquid crystal is thin and long in structure, the direction of the molecular arrangement can be controlled by artificially applying an electromagnetic field to the liquid crystal molecules having directionality and polarization in the molecular arrangement. [20] Therefore, if the alignment direction is arbitrarily adjusted, light may be transmitted or blocked according to the alignment direction of the liquid crystal molecules by optical anisotropy of the liquid crystal, thereby displaying colors and images. [21] In general, in a liquid crystal display device, a first substrate (thin film transistor substrate) and a second substrate (color filter substrate) are provided to face each other at a predetermined interval. [22] In more detail, the first substrate (thin film transistor substrate) has a gate wiring and a data wiring formed in a matrix on an inner surface of one transparent substrate. [23] A TFT (Thin Film Transistor) (TFT), which functions as a switching element, is formed at the intersection of the gate wiring and the data wiring, respectively, and a square pixel electrode contacting the drain electrode of the TFT is formed by the gate wiring and the data wiring. It is formed in each area. [24] On the other side of the second substrate (color filter substrate) facing the transparent substrate on which the plurality of pixel electrodes are formed, a black matrix (BM), a color filter layer, and a common electrode are formed on an inner surface of the transparent substrate. [25] When one gate wiring and one data wiring of the liquid crystal display device configured as described above are selected and a voltage is applied, only a TFT (Thin Film Transistor (TFT)) to which the voltage is applied is turned on, and the on TFT is turned on. Electric charges are accumulated in the pixel electrode connected to the drain electrode of to change the arrangement of the liquid crystal molecules between the common electrode. [26] The substrate bonding process, which is one of manufacturing processes of the liquid crystal display, is bonded to form a predetermined cell gap (hereinafter, referred to as a 'gap gap') between the first substrate and the second substrate, and injects liquid crystal into the inner space. In this way, the first and second substrates are electrically conductive. In this process, a sealant, a gap agent, a conductive agent and the like are used. [27] The sealant is a thermosetting resin material such as an epoxy resin, and is formed in a line shape (hereinafter, referred to as 'seal') around the periphery of the first or second substrate to bond the two substrates together. In addition to the role, the foreign material is prevented from entering the liquid crystal layer injected into the gap between the two substrates. [28] The gap agent is made of a material such as a plastic ball or glass fiber, which is located in the inner region of the seal line to maintain a constant gap between the two bonded substrates. [29] The conductive agent is a conductive material such as nickel or silver, and is located in the inner region of the seal line to electrically connect the pad pattern drawn from the common electrode of the first substrate to the connection terminal of the second substrate. [30] The structure of the liquid crystal panel constituting such a liquid crystal display is as follows. [31] 1 is a cross-sectional view of a partial region of a liquid crystal panel of a general liquid crystal display device. [32] As illustrated, the upper substrate 112, which is a color filter substrate, and the lower substrate 114, which is an array substrate, face the liquid crystal panel 100 for the liquid crystal display device at regular intervals, and the upper and lower substrates 112 are opposed to each other. , 114 is filled with the liquid crystal 116. [33] A gate electrode 118 is formed on the transparent substrate 102 of the lower substrate 114, and a gate insulating film 120 is formed over the entire substrate on the gate electrode 118. A semiconductor layer 122 including an active layer 122a and an ohmic contact layer 122b is formed on the semiconductor layer 122, and source and drain electrodes 124 and 126 are formed on the semiconductor layer 122. A protective layer 128 including a contact hole 130 is formed on the source and drain electrodes 124 and 126. The liquid crystal layer 128 is in contact with the drain electrode 126 through the contact hole 130. A pixel electrode 132 serving as one electrode for applying a voltage to 116 is formed. [34] In this case, the gate electrode 118, the semiconductor layer 122, and the source and drain electrodes 124 and 126 may be included and referred to as a thin film transistor T. [35] Meanwhile, a black matrix 134 is formed at a position corresponding to the thin film transistor T under the transparent substrate 101 of the upper substrate 112, and R, at a position corresponding to the pixel electrode 132. A G, B color filter 136 is formed, and a flattening layer 138 is formed below the black matrix 134 and the R, G, B color filter 136, and a lower part of the flattening layer 138 is formed. The common electrode 140 serving as another electrode for applying a voltage to the liquid crystal 116 is formed. [36] In addition, a spacer 142 is disposed on an inner surface between the common electrode 140 and the pixel electrode 132 to constantly maintain a cell gap, which is a gap between the upper substrate 112 and the lower substrate 114. have. [37] The seal pattern 144 keeps the cell gap constant like the spacer 142 and adheres the upper and lower substrates 112 and 114 to the outer portion of the liquid crystal panel 100 for the liquid crystal display device. Is formed. [38] Meanwhile, a process of manufacturing the lower substrate of the liquid crystal display as described above is as follows. [39] First, a gate material and a gate electrode 118 are formed by depositing a metal material on the transparent substrate 102 and patterning it using a first mask. [40] Next, the gate insulating layer 120, amorphous silicon, and amorphous silicon containing impurities are sequentially deposited, and then the active layer 122a and the impurity semiconductor layer 122 are formed by a photolithography process using a second mask. Form. [41] Subsequently, a metal layer is deposited and patterned using a third mask to form the data wirings, the source electrode 124, and the drain electrode 126, and the impurity semiconductor layer exposed between the source electrode 124 and the drain electrode 126. Is etched to complete the ohmic contact layer 122b. [42] Next, the protective layer 128 is deposited and patterned using a fourth mask to form a contact hole 130 exposing the drain electrode 126. [43] The protective layer 128 is formed to prevent damage or deterioration of the thin film transistor caused by rubbing and water infiltration during rubbing or transport during the liquid crystal cell process of the liquid crystal display device which is performed after the array process. It is made of a nitride film (SiNx) or BCB (BenzoCycloButene) which is an organic insulating film. [44] Finally, the transparent conductive material is deposited and patterned using a fifth mask to form the pixel electrode 132 made of a transparent conductive material contacting the drain electrode 126 through the contact hole 128. [45] As the transparent conductive material, indium tin oxide (ITO) having a low resistance at the time of tab bonding (TAB bonding) for contact resistance with a metal or an external circuit in a later process is mainly used. [46] The liquid crystal display device configured as described above prints and rubs an alignment layer on the upper substrate and the lower substrate, and then prints a seal pattern on the upper substrate and distributes and separates a spacer to secure a constant internal space on the lower substrate. In order to conduct the plate, a certain amount of the conductive agent is applied at a predetermined position. [47] In general, the conductive agent is dotting in an area inside the seal pattern printed on the edge of the substrate. [48] FIG. 2 is a view conceptually illustrating a state in which an upper / lower plate is conductive by a conductive agent in a liquid crystal display device having a substrate bonding process in a conventional liquid crystal display device. [49] As shown in FIG. 2, the conductive agent 220 coated in a predetermined amount on a predetermined position of the lower plate 200 may be bonded to the upper plate 210 to be conductive to the common electrode of the Vcom signal virtual plate of the lower plate after completion of the tab bonding process. Make sure [50] In the liquid crystal display device of the above-described manufacturing process, when the top layer is doped with the conductive agent as the metal pixel electrode, the upper and lower plates can be connected when the upper and lower plates are bonded together. [51] However, in order to shorten the manufacturing process and ultimately reduce the manufacturing cost, the liquid crystal display device has been actively researched. Accordingly, a structure in which the uppermost layer of the liquid crystal display device having the shortened manufacturing process is made of an insulating film has been developed. As described above, in the structure in which the insulating film is formed on the uppermost layer of the lower plate, there is a problem that the upper and lower plate conduction of the liquid crystal panel is not possible due to the insulating film by using the method of doping the inner region of the seal material as in the prior art. [52] According to the present invention, when the uppermost layer of the lower plate is an insulating film, the Vcom lines of the gate pad and the source pad are connected to the bottom of the lower plate for conduction of the upper and lower plates when the tab on which the drive drive is mounted is connected to the panel of the liquid crystal display and a signal is applied. An object of the present invention is to provide a method for manufacturing a panel of a liquid crystal display device, which is designed to extend outwardly and forms a conductive agent on a side surface so that the Vcom signal of the lower plate is conducted to the upper plate common electrode. [1] 1 is a cross-sectional view of a partial region of a liquid crystal panel of a general liquid crystal display device. [2] FIG. 2 is a view conceptually illustrating a state in which an upper / lower plate is conducted by a conductive agent in a liquid crystal display device in which a substrate bonding process is completed in a conventional general liquid crystal display device. FIG. [3] 3 is a cross-sectional view of a manufacturing process of a portion of a liquid crystal panel of a liquid crystal display according to the present invention. [4] 4 is a flowchart schematically illustrating a manufacturing process of a liquid crystal display according to an exemplary embodiment of the present invention. [5] 5 is a partial cross-sectional view of a liquid crystal display device having an open source pad and a gate pad, according to an exemplary embodiment of the present invention. [6] 6 is an enlarged partial plan view of a liquid crystal panel of a liquid crystal display according to one embodiment according to the present invention; [7] <Description of Signs of Major Parts of Drawings> [8] 360, 500, 560: transparent substrate 362: gate electrode [9] 364: gate insulating film 366: active layer [10] 368: ohmic contact layer 372: drain electrode [11] 370: source electrode 376: pixel electrode [12] 379: protective layer 505: lower substrate [13] 510: insulating film 540: Vcom line [14] 565: upper substrate 570: common electrode [15] 580: sealant 590: conduction control [53] According to an aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, including: forming a thin film transistor array including a gate wiring, a data wiring, a thin film transistor, and a pixel electrode on a first substrate; Forming an array of color filters on a second substrate; Bonding the first substrate and the second substrate to each other; Cutting the bonded first and second substrates in cell units; Opening pads of the gate wiring and the data wiring of the bonded first substrate; And applying a predetermined amount of the conductive agent to a predetermined position of the outer side surfaces of the bonded first and second substrates. [54] The forming of the thin film transistor array may include: forming a gate wiring on a transparent substrate, a gate pad at one end of the gate wiring, and a gate electrode protruding in one direction from the gate wiring; Forming an insulating film on an entire surface of the substrate including the gate pad; Forming an active layer and an ohmic contact layer on the insulating layer on the gate electrode; A data line crossing the gate line to define a pixel region, a source pad at an end of the data line, a source electrode protruding in one direction of the gate electrode from the data line, and a predetermined distance from the source electrode Forming a drain electrode; Forming a pixel electrode partially overlapping the drain electrode and electrically connected to the drain electrode; And applying an insulating film to the entire surface of the first substrate including the pixel electrode. [55] Forming an alignment layer and rubbing before bonding the first and second substrates to each other; And sealing and spacing the first and second substrates. [56] The conductive agent is characterized in that the conductive paste. [57] In order to achieve the above object, the present invention provides a liquid crystal display device comprising a gate wiring and a gate electrode, an insulating film, an active layer and an ohmic contact layer, a data wiring and a source electrode, a drain electrode, and a pixel electrode on a transparent substrate. A first substrate comprising thin film transistors sequentially stacked; An insulating film coated on the entire surface of the first substrate; A second substrate facing and spaced apart from the thin film transistor substrate at a predetermined interval; A seal member for bonding the first and second substrates together; And a conductive agent for conducting the first and second substrates at a predetermined position outside the seal material. [58] In the first substrate, a gate pad formed at one end of the gate line may protrude to the outside of the seal member to be opened, and the open gate pad may contact the conductive agent. [59] In the first substrate, a source pad formed at one end of the data line is protruded to the outside of the seal member to be opened, and the open source pad is in contact with the conductive agent. [60] The conductive agent is characterized in that the conductive paste. [61] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. [62] 3 is a cross-sectional view illustrating a process of manufacturing a partial region of a liquid crystal panel of the liquid crystal display according to the present invention, wherein the uppermost layer of the lower plate is an insulating film. [63] Referring to FIG. 3A, a gate electrode 362 is formed on the transparent substrate 360. [64] The gate electrode 362 is formed together with the gate wiring by forming a metal thin film by sputtering or the like, and then patterning the same by a photolithography method including a wet method. [65] A metal material such as aluminum (Al), copper (Cu), or chromium (Cr) may be used as a material of the gate electrode 362, and an aqueous solution of (NH 4 ) 2 S 2 O 8 may be used as an etching solution. [66] Referring to FIG. 3B, a gate insulating layer 364, an active layer 366, and an ohmic contact layer 368 are sequentially stacked on the transparent substrate 360 on which the gate electrode 362 is formed. [67] The gate insulating layer 364 is formed by depositing an insulating material of silicon nitride (SiNx) or silicon oxide (SiOx) on the transparent substrate 360. [68] An amorphous silicon (a-Si) and an amorphous silicon (n + a-Si) layer doped with impurities are sequentially stacked on the gate insulating layer 364 by using a CVD method. [69] Here, the amorphous silicon (a-Si) and the doped amorphous silicon (n + a-Si) are patterned using a photolithography method including dry etching to form the active layer 366 and the ohmic contact layer 368. Form. [70] Referring to FIG. 3C, source and drain electrodes 370 and 372 are formed on the ohmic contact layer 368. [71] The source and drain electrodes 370 and 372 are formed on the gate insulating layer 364 to cover the ohmic contact layer 368 through a sputtering method, and then patterned by a photolithography method including a wet etching method. Is formed. [72] Here, as the source and drain electrodes 370 and 372, molybdenum alloys such as molybdenum (Mo), MoW, MoTa, or MoNb are used among metals or metal alloys, and (NH 4 ) 2 S 2 O 8 is used as an etchant. An aqueous solution is used. [73] Referring to FIG. 3D, ITO, IZO, and ITZO, which are transparent conductive materials, are deposited on the source and drain electrodes 370 and 372 to form the pixel electrode 376 at portions except for the portions corresponding to the TFTs. [74] Referring to FIG. 3E, the active ohmic contact layer 368 is dry-etched using the source and drain electrodes 370 and 372 as a mask to expose the active layer 366 between the source and drain electrodes 370 and 372. [75] As illustrated, a protective layer 379 is formed on the gate insulating film 364 to cover the source and drain electrodes 370 and 372 and the pixel electrode 376. [76] The protective layer 379 is formed by depositing an insulating material on the entire surface and then patterning the protective layer 379. The protective layer 379 may be formed of an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx), or an acrylic organic compound, Teflon, BCB (Benzocyclobutene), Cytope (Cytop) or PFCB (Perfluorocyclobutane) is formed of a low dielectric constant organic insulating material. [77] 3B and 3C, the active layer 366, the ohmic contact layer 368, and the source and drain electrodes 370 and 372 may be simultaneously formed using a diffraction exposure method. [78] In the array substrate (lower substrate) of the liquid crystal display device formed as described above, the uppermost layer is formed of an insulating film. [79] 4 is a flowchart schematically illustrating a manufacturing process of a liquid crystal display according to an exemplary embodiment of the present invention. [80] In the liquid crystal display, a plurality of gate lines are arranged at regular intervals, and a plurality of data lines are arranged at regular intervals in a direction perpendicular to the gate lines to form a matrix pixel area, and in each pixel area, a thin film transistor is provided. And a lower substrate on which a pixel electrode is formed, an upper substrate on which a black matrix and a color filter layer are formed, and a liquid crystal layer injected between the upper substrate and the lower substrate. [81] The manufacturing process of the liquid crystal display device configured as described above may be divided into three processes, a substrate manufacturing process, a cell manufacturing process, and a module process. [82] In this case, the lower substrate has a gate pad and a source pad at one end of the gate line and the data line, respectively, wherein the gate pad and the source pad are opened during the cell manufacturing process. [83] In the method of opening the gate pad and the source pad, a liquid crystal cell is formed by joining an upper substrate and a lower substrate, and then the side surface of the liquid crystal cell is immersed in an etching solution capable of opening the gate pad and the source pad for a predetermined time. That is it, the detailed description about the manufacturing process of the liquid crystal display device formed in this way is as follows. [84] First, the substrate fabrication process is divided into a lower substrate fabrication (thin film transistor fabrication) (S10_1) process and an upper substrate fabrication (color filter fabrication) (S10_2) process, respectively, using the cleaned glass substrate. [85] In this case, the lower substrate manufacturing process refers to a process of forming a thin film transistor array having a gate wiring, a data wiring, a thin film transistor, and a pixel electrode on the lower substrate, and the upper substrate manufacturing process is a dye or pigment on the upper substrate on which the light shielding film is formed. To form a color filter layer of R (Red), G (Green), and B (Blue) color, and to form a color filter array that forms a common electrode (ITO: Indium Tin Oxide) on the front surface of the upper substrate including the color filter layer. Refers to the process to do. [86] In addition, the cell process refers to a process of manufacturing a unit liquid crystal cell capable of driving signals when a driving circuit is added to the completed lower substrate and the upper substrate. Such a cell process is an alignment treatment process (S11) for alignment of liquid crystal molecules. And sealing and spacing step (S12), upper and lower substrate bonding step (S13), scribe & break step (S14), gate pad and / or source pad opening step (S15), and conductive agent coating step ( S16), a liquid crystal injection process (S17), a liquid crystal injection hole sealing process (S18), and a polarizing plate attachment process (S19) can be divided roughly. [87] In more detail, the alignment treatment process (S11) and the thin film transistor process are completed to form a uniform alignment of the liquid crystal molecules to enable normal liquid crystal driving, and to form and then align the alignment film in order to have uniform display characteristics. Sealing and spacing process (S12) of dispersing a spacer and forming a sealing material so as to maintain a constant gap between the lower substrate and the two substrates of the upper substrate where the color filter process is completed, and bonding the lower substrate and the upper substrate. A process (S13), a scribe & break process (S14) for separating a plurality of cells formed on the lower substrate and the upper substrate, a step (S15) of opening the gate pad and the source pad of the separated cell; And applying a conductive agent so that the Vcom of the lower substrate and the transparent electrode of the upper substrate are conductive (S16), and a capillary tube between each cell. Injecting the liquid crystal by using the phenomenon and the pressure difference (S17), the step of sealing the liquid crystal injection hole to prevent the liquid crystal of the cell is completed, the lower substrate (S18), and on both sides of the cell It progresses through the process (S19) of attaching a polarizing plate. [88] Next, the module process S20 is a process of manufacturing a module by manufacturing a circuit unit for signal processing and connecting the thin film transistor liquid crystal display panel and the signal processing circuit unit. [89] As described above, the opening process of the gate pad and the source pad of the lower substrate is not performed during the substrate fabrication process, but after cell division, or after the liquid crystal is injected into the cell by the scribe & break process. Proceed after sealing the liquid crystal injection port. [90] After the upper and lower plates are bonded in the same manner as above, when the source pad and the gate pad are opened by immersing the sides of the liquid crystal cell in the etching solution for a predetermined time, a conductive agent, that is, a conductive paste is applied to a predetermined position of the liquid crystal panel to conduct upper and lower plates. do. [91] FIG. 5 is a partial cross-sectional view of a liquid crystal display with an open source pad and a gate pad according to an embodiment of the present invention. [92] An insulating film 510 is formed on the transparent substrate 500 in the lower substrate 505 of the liquid crystal display according to the present invention, and the Vcom line 540 is outside the seal material 580 on the insulating film 510. It is configured to come out. [93] A common electrode 570 is formed under the transparent substrate 560 of the upper substrate 565 to serve as another electrode for applying a voltage to the liquid crystal. [94] Here, the conductive agent is such that the Vcom line 540 of the lower substrate 505 and the common electrode 570 of the upper substrate 565 are connected to each other on the side surface of the panel of the upper substrate 565 and the lower substrate 505. 590, that is, conductive paste is applied. [95] Here, the conductive agent 590 is made of a conductive material such as nickel (Ni) and silver (Ag), and is positioned outside the portion where the upper and lower substrates 565 and 505 are bonded as shown in FIG. 5. [96] 6 is an enlarged partial plan view of a liquid crystal panel of a liquid crystal display according to an exemplary embodiment of the present invention. [97] Referring to FIGS. 5 and 6, when the lower substrate 505 configured to come out of the seal material 580 and the upper substrate coated with the spacer are bonded to each other, a driving drive for driving the liquid crystal display device may be used. Will be implemented. [98] At this time, in order to allow Vcom to be conductive between the lower substrate 505 and the upper substrate 565, the conductive agent 590 is applied to the predetermined position of the outer side after the upper and lower plates are bonded. [99] Although the present invention has been described in detail through specific embodiments, this is for describing the present invention in detail, and the manufacturing method of the liquid crystal display device according to the present invention is not limited thereto, and the present invention is not limited thereto. It is apparent that modifications and improvements are possible to those skilled in the art. [100] In the case of the liquid crystal display device in which the uppermost layer of the lower plate is an insulating film, the effect of the present invention is to join the upper substrate and the lower substrate, open the gate pad and the source pad, and apply a certain amount of the conductive agent to a predetermined position on the outer side of the panel. As a result, the Vcom line designed to extend to the outside of the lower substrate and the common electrode of the upper substrate may be connected to each other.
权利要求:
Claims (8) [1" claim-type="Currently amended] Forming a thin film transistor array having a gate wiring, a data wiring, a thin film transistor, and a pixel electrode on the first substrate; Forming an array of color filters on a second substrate; Bonding the first substrate and the second substrate to each other; Cutting the bonded first and second substrates in cell units; Opening pads of the gate wiring and the data wiring of the bonded first substrate; And applying a predetermined amount of a conductive agent to a predetermined position of outer side surfaces of the bonded first and second substrates. [2" claim-type="Currently amended] The method of claim 1, The forming of the thin film transistor array, Forming a gate wiring on a transparent substrate in one direction, a gate pad at one end of the gate wiring, and a gate electrode protruding in one direction from the gate wiring; Forming an insulating film on the entire surface of the substrate including the gate pad; Forming an active layer and an ohmic contact layer on the insulating layer on the gate electrode; A data line crossing the gate line to define a pixel region, a source pad at an end of the data line, a source electrode protruding in one direction of the gate electrode from the data line, and a predetermined distance from the source electrode Forming a drain electrode; Forming a pixel electrode partially overlapping the drain electrode and electrically connected to the drain electrode; And applying an insulating film to the entire surface of the first substrate including the pixel electrode. [3" claim-type="Currently amended] The method of claim 1, Prior to bonding the first and second substrates, Forming an alignment layer with respect to the first and second substrates, and then rubbing; Sealing and spacing the first and second substrates; manufacturing method of a liquid crystal display device further comprises. [4" claim-type="Currently amended] The method of claim 1, The conducting agent is a conductive paste, characterized in that the manufacturing method of the liquid crystal display device. [5" claim-type="Currently amended] A first substrate including a thin film transistor in which a gate wiring and a gate electrode, an insulating film, an active layer and an ohmic contact layer, a data wiring and a source electrode, a drain electrode, and a pixel electrode are sequentially stacked on the transparent substrate; An insulating film coated on the entire surface of the first substrate; A second substrate facing and spaced apart from the thin film transistor substrate at a predetermined interval; A seal member for bonding the first and second substrates together; And a conductive agent for conducting the first and second substrates at a predetermined position outside the seal material. [6" claim-type="Currently amended] The method of claim 5, In the first substrate, And a gate pad formed at one end of the gate line protrudes to the outside of the seal material to be opened, and the open gate pad and the conductive agent are in contact with each other. [7" claim-type="Currently amended] The method of claim 5, In the first substrate, And a source pad formed at one end of the data line to protrude to the outside of the seal material and to be opened, wherein the open source pad and the conductive agent are in contact with each other. [8" claim-type="Currently amended] The method of claim 5, The conductive agent is a conductive paste, characterized in that the liquid crystal display device.
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同族专利:
公开号 | 公开日 KR100926433B1|2009-11-12| US20060189015A1|2006-08-24| US7528924B2|2009-05-05| US20040125326A1|2004-07-01|
引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题
法律状态:
2002-12-31|Application filed by 엘지.필립스 엘시디 주식회사 2002-12-31|Priority to KR1020020088109A 2004-07-07|Publication of KR20040061809A 2009-11-12|Application granted 2009-11-12|Publication of KR100926433B1
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申请号 | 申请日 | 专利标题 KR1020020088109A|KR100926433B1|2002-12-31|2002-12-31|Liquid Crystal Display and the Fabrication method| 相关专利
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